30V P-Channel Enhancement-Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@-5.3A = 46m?@TYP
RDS(ON), Vgs@-4.5V, Ids@-4.2A = 70m?@TYP
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM