型號：MT29F64G08CBAAAWP

品牌：Micron Technology,Inc. （美光科技）

類別：儲存器**NAND閃存**海量閃存

Specifications

*Density: 64Gb

*Status: Production

*RoHS: Yes

*Width: x8

*Voltage: 3.3V

*Package: TSOP

*Pin Count: 48-pin

*Bits/Cell: MLC

*MT/s:

*I/O: Common

*Op Temp:-40Cto +85C

General Description

Micron NAND Flash devices include an asynchronous data interface for high-performance

I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer

commands, address, and data. There are five control signals used to implement the asynchronous

data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control

hardware write protection (WP#) and monitor device status (R/B#).

This Micron NAND Flash device additionally includes a synchronous data interface for

high-performance I/O operations. When the synchronous interface is active, WE# becomes

CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe

(DQS).

This hardware interface creates a low pin-count device with a standard pinout that remains

the same from one density to another, enabling future upgrades to higher densities

with no board redesign.

A target is the unit of memory accessed by a chip enable signal. A target contains one or

more NAND Flash die. A NAND Flash die is the minimum unit that can independently

execute commands and report status. A NAND Flash die, in the ONFI specification, is

referred to as a logical unit (LUN). For further details, see Device and Array Organization.