Micron 鎂光代理商，SK hynix

MT29F8G08ABABAWP:B ,MT29F8G08ABACAWP-IT：C,

MT29F8G08ADBDAH4-IT：D, MT29F8G16ADBDAH4-IT：D,MT29F4G08ABADAH4-IT：D,

Features
? Open NAND Flash Interface (ONFI) 1.0-compliant1
? Single-level cell (SLC) technology
? Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
16Gb: 16,384 blocks
? Asynchronous I/O performance
–
tRC/tWC: 20ns (3.3V), 25ns (1.8V)
? Array performance
– Read page: 25μs 3
– Program page: 200μs (TYP: 1.8V, 3.3V)3
– Erase block: 700μs (TYP)
? Command set: ONFI NAND Flash Protocol
? Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
? Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
? Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
? WP# signal: Write protect entire device
? First block (block address 00h) is valid when shipped from factory with ECC. For minimum required
ECC, see Error Management.
? Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000
? RESET (FFh) required as first command after power-on
? Alternate method of device initialization (Nand_Init) after power up (contact factory)
? Internal data move operations supported within the
plane from which data is read
? Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
? Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
? Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40°C to +85°C
– Automotive Industrial (AIT): –40°C to +85°C
– Automotive (AAT): –40°C to +105°C
? Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA